基于GaN器件的高频高效LLC谐振变换器.pdfVIP

2021 年 12 月 电 工 技 术 学 报 Vol.36 Sup.2 第 36 卷增刊 2 TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY Dec. 2021 DOI: 10.19595/ki.1000-6753.tces.L90259 基于GaN 器件的高频高效LLC 谐振变换器 童 军 吴伟东 李发成 杜光辉 （西安科技大学电气与控制工程学院 西安 710054 ） 摘要 传统功率器件在高频下，器件本身产生较大的损耗，严重制约着高效、高功率密度的 开关变换器的需求，第三代宽禁带半导体器件氮化镓（GaN ）的出现能够进一步地提高变换器的 效率和功率密度。GaN 器件具有开关速度快以及无反向恢复损耗等特点，该文利用这一特性，结 合印制电路板（PCB ）平面变压器，将其应用于LLC 谐振变换器中，最终设计一款48V 输入、12V 输出、120W、1MHz 的实验样板。实验结果表明，该样板的体积得到大幅度地降低，通过采用 GaN 器件极大地提高了变频器的效率和功率密度，为采用GaN 器件的高功率密度变换器的设计提 供了参考。 关键词：LLC 谐振变换器 GaN 功率管 平面变压器 寄生参数 电磁仿真 中图分类号：TM46 High Frequency and High Efficiency LLC Resonant Converter Based on GaN Device Tong Jun Wu Weidong Li Facheng Du Guanghui （School of Electrical and Control Engineering Xi’an University of Science and Technology Xi’an 710054 China ） Abstract At high frequencies, traditional power devices cause large losses in the device itself, which severely restricts the demand for high-efficiency and high-power density switching converters. The emergence of the third-generation wide-gap semiconductor device GaN can further improve the efficiency of the converter and power density. GaN devices have the characteristics of fast switching speed and no reverse recovery loss. This article uses this feature, combined with the PCB planar transformer, to apply it to the LLC resonant converter, and finally designed a 48V input and 12V output, 120W, 1MHz experimental model. The experimental results show that the size of the experimental model has been greatly reduced, through the use of GaN devices. The design provides a reference for the