建筑指南说明.pdfVIP

SAEDEDK90-Srambuildingguidlines

1.StaticRandomAccessMemory(SRAM)

Staticrandomaccessmemory(SRAM)iswidelyusedtostoredigitaldatabecauseit

featuresfastandrobustwriteandreadoperationsceptablepowerconsumption.

TheSRAMconsistsofanarrayofstaticmemorycellswhichareconnectedbyhorizontal

h

wordlinesandverticalbitlinesasillustratedinFig.1.Toselectawordlineoutof2,ah-bitaddress

hastobeapplied,e.g.,512bitsrequireh=9.Theoutputusuallyorganizedasawordofbbits,

e.g.,b=32.Fromthearchitecturalpointofviewtheoutputwordrepresentsab-bitinput/output

port(I/O-port).TheI/O-portconsistsofbI/Oblocks,i.e.,oneblockperbitoftheoutputword.

ww

EachbitoftheI/O-portcanbeconnectedtooneoutof2bitlinesbya2-to-1columnorbitline

w

multiplexer(MUX).Thetotalnumberofcolumns(bitlines)isgivenbyb×2,

e.g.256forw=3.AnySRAMcellcanbeaccessedbyanaddresswordwhichis(h+w)bits

long,e.g.(h+w)=12.Thisaddressisappliedtothecontrollogicblockdrawninthelowerleft-

handcornerinFig.1.Allmemoryoperations,e.g.,write,read,enable,data-in,data-out,are

ernedbythiscontrollogic.Theexamplewithb=32,h=9andw=3yealdsamemorysize

of128kBit=16kByte.Toludethelengthoftheoutputword,thememoryisreferredtoasa

(b×2(h+w))-bitSRAM,e.g.a32×4k-bitSRAM.

b×2wcolumns(bitlines)

DC2hrows