(8.3.2)--analog_electronic模拟电子技术基础.docVIP

Shandonguniversityoftechnology《AnalogyElectronics》paper

2ndsemesterin2015-2016academicyearclass：name：studentnumber：

…………………….………………

Major

Electronics

Propertiesofexam

closed-bookexamination

ProblemWriter

ShengCuixia

durationoftest

100minuts

QuestionNo.

1

2

3

4

total

marks

20

20

30

30

reviewer

checker

1.Fillintheblanks（2marksforeachblank，totally20marks）

(1)Whenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill________.

(2)Whentrivalentelementsareusedindoping,theresultingmaterialiscalled____material,themajoritycarrierofwhichis________.

(3)WhenaBJTisbiasedintheactiveregion,itsbase-emitterjunctionis_____-biasedanditscollector-basejunctionis__-biased.

(4)Theh-parametermodeluses____parameterstodescribetheequivalentcircuitoftheBJT

(5)Agiventransistorhasthefollowingvalues:hFE=200,hfe=120,hie=5kΩ,hre=40,andhoe=2500μS.thevalueofreis__

forthedevice.

(6)Afixed-biasBJTcircuithasvaluesofhFE=200andhfe=120.Theaccurrentgainforthedeviceis_____.

(7)Forann-channelJFFT,IDSS=8mA,andVP=-6V.IfVGS=-2V.WhatisthevalueofthedraincurrentID

(8)Thefixed-biastechniquerequires_______powersupplies.

2.Trueorfalse（2marksforeachquestion，totally20marks，writeTRUEorFALSEinthebrackets）

(1)Anintrinsicsemiconductorisonethatisaspureaspresent-daytechnologycanmakeit.(）

(2)Electronsaretheminoritycarriersinann-typematerial. （）

(3)Holesarethemajoritycarriersinap-typematerial.（）

(4)ThevoltagegainofaFETamplifierisgenerallylargerthanthatofacomparableBJTamplifier.（）

(5)TheinputcurrentforaFE