暂定东芝数字集成电路硅栅规格书.pdfVIP

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  • 2024-03-06 发布于北京
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TOSHIBATC58NVG1S3ETA00

TENTATIVETOSHIBAMOSDIGITALINTEGRATEDCIRCUITSILICONGATECMOS

2

2GBIT(256M8BIT)CMOSNANDEPROM

DESCRIPTION

TheTC58NVG1S3Eisasingle3.3V2Gbit(2,214,592,512bits)NANDElectricallyErasableandProgrble

2

Read-OnlyMemory(NANDEPROM)organizedas(2048+64)bytes64pages2048blocks.

Thedevicehastwo2112-bytestaticregisterswhichal

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