resistance ohmic contacts to type gan using al au multilayer scheme使用Ti Al Re Au多层方案实现型低电阻欧姆接触.pdfVIP

JournalofOptoelectronicsandAdvancedMaterialsVol.6,No.1,March2004,p.177-182

LOW-OHMICCONTACTSTON-TYPEGaNUSINGTi/Al/Re/Au

MULTILAYERSCHEME

*

V.RajagopalReddy,C.K.Ramesh

DepartmentofElectronics,UniversityofMysore,Post-GraduateCentre,Hemagangotri,

Hassan–573220,

ATi/Al/Re/Aumultilayerschemehasbeendevelopedforobtainingverylowohmiccontactto

moderaydopedn-typeGaN(4.07×1018cm–3).ItisshownthattheI-Vcharacteristicsofthe

as-depositedcontactsimproveduponannealingtemperaturesintherangeof550–750°C.

Specificcontactaslowas1.3×10-6Ωcm2isobtainedfromtheTi(150Å)/Al

(600Å)/Re(200Å)/Au(500Å)contactannealedat750°Cfor1mininaNambient.Itisalso

2

shownthatannealingresultsinalargereduction(by~150meV)intheSchottkybarrier

heightsofcontact,comparedtotheas-depositedone.BasedontheXPSandAESresults,

possibleexnationsfortheannealingtemperaturedependenceofthespecificcontact

oftheTi/Al/Re/Aucontactsaredescribedanddiscussed.

(ReceivedJanuary7,2004;acceptedFebruary19,2004)

Keywords:OhmicContacts,n-typeGaN,Schottkybarrierheight,X-rayphotoelectron

spectroscopy,Augerelectronmicroscopy

1.Introduction

Galliumnitride(GaN)ishighlyattractivematerialformakingbluelightsources[1,2],high-

powermicrowavedevices[3]andhigh-temperatureelectronicdevi