3d沟槽栅器件仿真4h 3d nigbt 2013.pdfVIP

DeviceSimulationof3DTrenchGate4H-SiC

Device

ThisTCADSentaurus™simulationprojectprovidesatemtesetupforthedevice

simulationofthree-dimensional(3D)4H-siliconcarbide(SiC)devices.Thisproject

showcasestheabilityofSentaurusDevicetosimulateelectricalcharacteristicsofa

3DSiCdevice.Specialattentionisgiventomathsettingstoaddresstwokey

challengesfacedwhensimulatingelectricalcharacteristicsofSiCdevices:low

intrinsiccarrierconcentrationandanisotropicnature.

The3DtrenchgatestructureisgeneratedusingSentaurusStructureEditor

followedbydevicesimulationusingSentaurusDevice.Alongwithoff-state

breakdowncharacteristics,I–VandafamilyofI–Vcurvesaresimulated.The

cgcc

effectoftrenchdepthonthebreakdownvoltageisdiscussedaswell.

VersionInformation

ThisapplicationnotehasbeendesignedandverifiedusingTCADSentaurus

VersionH-2013.03-SP1.

Runningitwithpreviousorfutureversionsmaypossiblyrequireminoradjustments.

Synopsys,theSynopsyslogo,andSolaresandSentaurusisaofSynopsys,.

Allotherproductsorservicenamesmentionedhereinaresoftheirrespectiveholdersandshouldbetreatedassuch.

Copyright©2013Synopsys,.s.

IntroductionSentaurusD