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WetEtchingandCleaning:
SurfaceConsiderationsandProcessIssuesDr.SriniRaghavanDept.ofChemicalandEnvironmentalEngineeringUniversityofArizona?1999ArizonaBoardofRegentsforTheUniversityofArizona1
OutlineEtchingandcleaningsolutions/processesParticleadhesiontheorySurfacechargeandchemistryContamination2
EtchingandCleaningSolutionsHFSolutionsDiluteHF(DHF)solutions-preparedbydiluting49%HFwithdionizedwaterBufferedHFsolutions-preparedbymixing49%HFand40%NH4Finvariousproportionsexample:BufferedOxideEtch(BOE)-patentedformofbufferedHFsolutionMaycontainsurfactantsforimprovingwettabilityofsiliconandpenetrationoftrenchescontaininghydrophobicbasenonionicoranionichydrocarbonorfluorocarbon3
EtchRateofSiO2EtchRate(?/min)atconstanttemp.Weight%HF0100EtchRate(?/min)NH4F/HFRatiosTemperatureEtchrateofSiO2increaseswithincreasingweight%ofHFintheetchsolution,aswellashigherratiosofNH4FbufferinBHFsolutions.Etchratealsodirectlyincreaseswithincreasingtemperature.MoreNH4FLessNH4F4
EtchingandCleaningSolutions(cont’d)PiranhaH2SO4(98%)andH2O2(30%)indifferentratiosUsedforremovingorganiccontaminantsandstrippingphotoresistsPhosphoricacid(80%)SiliconnitrideetchNitricacidandHFSiliconetch5
EtchingandCleaningSolutions(cont’d)SC-2(StandardClean2)HCl(73%),H2O2(30%),dionizedwaterOriginallydevelopedataratioof1:1:5UsedforremovingmetalliccontaminantsDilutechemistries(compositionswithlessHClandH2O2)arebeingactivelyconsidered6
AlkalineCleaningSolutionsSC-1(StandardClean1)NH4OH(28%),H2O2(30%)anddionizedwaterClassicformulationis1:1:5Typicallyusedat70CDiluteformulationsarebecomingmorepopularTetramethylAmmoniumHydroxide(TMAH)Example:BakerCleanTMAH(10%),nonionicsurfactant(2%),pHregulatorsforarangeof8-10,andchelating/complexingagentsCouldpossiblybeusedwithH2O2toreplaceSC1an
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