Danfoss丹佛斯Semikron Danfoss Application Note 21-001 Rev-02 Power Cycle Model for IGBT Product Lines EN 应用指南.pdf

ApplicationNote

AN21-001

Revision:02

Issuedate:2024-07-23

Preparedby:Dr.ArendtWintrich

Approvedby:Dr.UweScheuermann

Keyword:PowerCycling,Lifetime,IGBTModules

PowerCycleModelforIGBTProductLines

1.Introduction1

1.1FailuremodesinPowerCycling1

1.2Testprocedure,failurecriteriaandstatistic1

1.3HistoryofPClifetimemodelling2

1.4BaseforPClifetimemodels2

1.5Validity2

2.PowerCyclingLifetimeModels3

2.1LifetimeModelEquations3

2.2Timedependencyton3

2.3DependencyfrommediumtemperatureTjm3

2.4LowTbehaviourdescribedbyexponent4

j

2.5Chipthicknesskthickness5

2.6Chipsizeandrateofmoduleareautilization5

3.PowerCycleFigures5

3.1Moduleswithcopperbaseplate,solderedchipsandaluminumbondwires6

3.2Moduleswithoutbaseplate,solderedchipsandaluminumbondwires7

3.3Moduleswithoutbaseplate,singlesidesinteredchipsandaluminumbondwires8

1.Introduction

SemikronDanfossintroduceswiththisApplicationNotenewpowercycle(PC)figuresforpowersemiconductor

moduleswithwirebondedchips.ThefailuremodescoveredbythisApplicationNotearechipsolderfatigue,

bondwireheelcrackorlift-offandincombinationoflateralsodegradationoftopsidemetallization.The

presentedcurvesdonotcoveractiveandpassivetemperaturecyclingwhichratherstressesanddegrades

thebaseplatesoldering.Therevision02introducesanadditionalthicknessfactorforrectifierdevicesonly.

1.1FailuremodesinPowerCycling

PowercyclingfailureisanEndofLife(EOL)failure.Powercyclinghappens,whenasemiconductorchipinside

apackageisloadedbycurrentandisheatedupbythelossescausedbythecurrentflow.Duringtheheating

phaseatemperaturegradientarisesinsidethepackage