ITAXXB1意法 深圳恒锐丰科技.pdf

ITAxxB1

BidirectionalTransil™arrayfordatalineprotection

Features

■HighsurgecapabilityTransilarray:

IPP=40A(8/20µs)

■Peakpulsepower:300W(8/20µs)

■Upto5bidirectionalTransilfunctions

SO-8

■Lowclampingfactor(VCL/VBR)athighcurrent

level

■Lowleakagecurrent

Figure1.Functionaldiagram

■ESDprotectionupto15kV

ComplieswiththefollowingstandardsI/O118GND

■IEC61000-4-2level4

I/O227

–15kV(airdischarge)

–8kV(contactdischarge)I/O336

■MILSTD883G-Method3015-7:class3BI/O445GND

–25kV(humanbodymodel)

Applications

Differentialdatatransmissionlineprotection,such

as:

■RS-232

■RS-423

■RS-422

■RS-485

Description

Transildiodearraysprovidehighovervoltage

protectionbyclampingaction.Their

instantaneousresponsetotransientovervoltages

makesthemparticularlysuitedtoprotectvoltage

sensitivedevicessuchasMOStechnologyand

lowvoltagesuppliedIC’s.

TheITAseriescombineshighsurgecapability

againstenergeticpulseswithhighvoltage

performanceagainstESD.

TM:TransilisatrademarkofSTMicroelectronics

November2007Rev21/7

7

Characteristics