晶圆制造专题知识.pptx

Chapter4

WaferManufacturingandEpitaxyGrowing2025/1/31

CrystalStructuresAmorphousNorepeatedstructureatallPolycrystallineSomerepeatedstructuresSinglecrystalOnerepeatedstructure2025/1/32

AmorphousStructure2025/1/33

PolycrystallineStructureGrainGrainBoundary2025/1/34

SingleCrystalStructure2025/1/35

WhySilicon?Abundant,cheapSilicondioxideisverystable,strongdielectric,anditiseasytogrowinthermalprocess.Largebandgap,wideoperationtemperaturerange.2025/1/36

Source:2025/1/37

UnitCellofSingleCrystalSilicon2025/1/38

CrystalOrientations:100xyz100plane2025/1/39

CrystalOrientations:111xyz100plane111plane2025/1/310

CrystalOrientations:110xyz110plane2025/1/311

100OrientationPlaneAtomBasiclatticecell2025/1/312

111OrientationPlaneSiliconatomBasiclatticecell2025/1/313

IllustrationofthePointDefectsSiliconAtomImpurityonsubstitutionalsiteFrenkelDefectVacancy(空位)orSchottkyDefectImpurityinInterstitialSiteSiliconInterstitial間隙2025/1/314

DislocationDefects2025/1/315

FromSandtoWaferQuartzsand:silicondioxideSandtometallicgradesilicon(MGS)ReactMGSpowderwithHCltoformTCSPurifyTCSbyvaporizationandcondensationReactTCStoH2toformpolysilicon(EGS)MeltEGSandpullsinglecrystalingot2025/1/316

FromSandtoWafer(cont.)Cutend,polishside,andmakenotchorflatSawingotintowafersEdgerounding,lap,wetetch,andCMPLaserscribeEpitaxydeposition2025/1/317

晶圓形成之步驟

FromSandtoSiliconHeat(2023°C)SiO2+2C?Si+2COSandCarbonMGSCarbonDioxideMGS(poly-silicon)with98%purity(1)首先由石英砂提煉成冶金級多晶矽2025/1/318

SiliconPurificationISi+HCl?TCS(vapor)SiliconPowderHydrochlorideFiltersCondenserPurifierPureTCS(liquid)with99.9999999%Reactor,300?C2025/1/319

PolysiliconDeposition,EGSHeat(1100°C)SiHCl3+H2?Si+3HClTC