YJ扬杰IGBT单管 DGW50N120CTL1A规格说明书.pdf

人

IGBTDiscrete

VcE1200

名下

C四VcESADIc=S0A1.SS

G

Applications

Circuit.FrequencyConverters

.ACandDCservodriveamplifier

C.Uninterruptiblepowersupply

Features

，Highbreakdownvoltageto1200Vforimproved

reliability

G-Maximumjunctiontemperature175C

Positivetemperaturecoefficient

E。Includingfastsoftrecoveryanti-parallelFWD

.Highshortcircuitcapability(10us)

MaximumRatings

ParameterSymbolValue人名

Collector-EmitterBreakdownVoltage人1200

DCCollectorCurrentblimitedbyTinax

Tc=25扎Te80人

[喜人50

DiodeForwardCurrent,limitedbyTimax

Tec=25气二80A

[名人50

ContinuousGate-EmitterVoltasgeVGE士20

TransientGate-EmitterVoltage了”4了30

(pp委10hs,D0.010)

TurmoffSafeOperatingAreaVcE1200V，100

TK150C

PulsedCollectorCurrentVarp=15V，

tplimitedbyThaax二100人

DiodePulsedCurrenttplimitedbyTimaxJIFpuk100A

ShortCircuitWithstandTime，

Tse10hs

VE=1$V,Vcc=600V，VcEM委1200V

PowerDissipation,Tj=175S，Tc=25S民Peer468W

S-M529D

Rev.1.1,1-Sep-24

IAADGWSON120CTLIA靖,

OperatingJunctionTemperature再-40...+175

StorageTemperatureTs-35...+150

SolderingTemperature，wavesoldering1.6mml260

(0.063in.)fromcasefor10s

ElectricalCharacteristicsoftheIGCBT(TF