宏盛微半导体HYG180N10LS1P.pdf

HYG180N10LS1P

SingleN-ChannelEnhancementModeMOSFET

FeaturePinDescription

100V/50A

RDS(ON)16.5mΩ(typ.)@VGS10V

RDS(ON)22mΩ(typ.)@VGS6V

100%AvalancheTested

ReliableandRugged

Halogen-FreeDevicesAvailable

(RoHSCompliant)

TO-220FB-3L

Applications

HighFrequencyPoint-of-LoadSynchronousBuckConverter

PowerToolApplication

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

PP:TO-220FB-3L

G180N10

XYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.2

1

HYG180N10LS1P

AbsoluteMaximumRatings

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