安徽2025自考[大功率半导体科学]英语二考前冲刺练习题.docxVIP

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安徽2025自考[大功率半导体科学]英语（二）考前冲刺练习题

一、单项选择题（共10题，每题2分，计20分）

1.Thedevelopmentof__________hassignificantlyimprovedtheefficiencyofpowerelectronicdevices.

A.siliconcarbide(SiC)

B.galliumarsenide(GaAs)

C.indiumphosphide(InP)

D.aluminumgalliumarsenide(AlGaAs)

2.Inthecontextofpowersemiconductordevices,__________isacriticalparameterfordeterminingthermalperformance.

A.breakdownvoltage

B.forwardcurrent

C.thermalconductivity

D.switchingfrequency

3.Thetermreverserecoverytimereferstotheperiodduringwhich__________.

A.thedevicetransitionsfromontooffstate

B.thedevicetransitionsfromofftoonstate

C.chargestoredinthejunctiondischarges

D.thedeviceexperiencesavalanchebreakdown

4.Akeyadvantageofsiliconcarbide(SiC)MOSFETsoversilicon(Si)MOSFETsistheir__________.

A.lowercost

B.higheroperatingtemperature

C.lowerswitchingfrequency

D.smallersize

5.The__________isacriticalfactorinreducingswitchinglossesinpowerconverters.

A.gateresistance

B.drain-sourceresistance

C.forwardconductionloss

D.reverserecoveryloss

6.Inapowersupplydesignforindustrialapplications,theuseof__________canenhancereliabilityandefficiency.

A.buckconverters

B.boostconverters

C.flybackconverters

D.phase-controlledrectifiers

7.The__________isacommonissueinhigh-powersemiconductordevicesduetohighcurrentdensity.

A.thermalrunaway

B.forwardconductionloss

C.reversebreakdown

D.gateoxidebreakdown

8.AtypicalapplicationofsiliconIGBTsisin__________.

A.mobilephones

B.electricvehicles

C.radiofrequencycircuits

D.opticalcommunicationsystems

9.The__________isameasureofhowquicklyasemiconductordevicecanswitchbetweenonandoffstates.

A.risetime

B.falltime

C.switchingloss

D.conductionloss

10.Inthecontextofpowerelectronics,__________isakeyconsiderationforreducingelectromagneticinterference(E