MOS工艺讲解课件.pptVIP

MOS工艺讲解

2025/11/5siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶体管的立体结构

2025/11/5siliconsubstrateoxidefieldoxide

2025/11/5siliconsubstrateoxidephotoresist

2025/11/5ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide

2025/11/5非感光区域siliconsubstrate感光区域oxidephotoresist

2025/11/5Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影

2025/11/5siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀

2025/11/5siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶

2025/11/5siliconsubstrateoxideoxidegateoxidethinoxidelayer

2025/11/5siliconsubstrateoxideoxidepolysilicongateoxide

2025/11/5siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate

2025/11/5siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringresiststrip.sourcedrainionbeam

2025/11/5siliconsubstrateoxideoxidegategatesourcedraindopedsilicon

2025/11/5自对准工艺在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入

2025/11/5siliconsubstratesourcedraingate

2025/11/5siliconsubstrategatecontactholesdrainsource

2025/11/5siliconsubstrategatecontactholesdrainsource

2025/11/5完整的简单MOS晶体管结构siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide

2025/11/5CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+

2025/11/5主要的CMOS工艺VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si

2025/11/5掩膜1：P阱光刻P-wellP-wellN+N+P+P+N+P+N-SiP

2025/11/5具体步骤如下：1．生长二氧化硅（湿法氧化）：Si(固体)+2H2O?SiO2（固体）+2H2

2025/11/5氧化

2025/11/52．P阱光刻：涂胶腌膜对准曝光光源显影

2025/11/5

2025/11/5硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3．P阱