80V 12.9A N沟道增强型MOSFET特性与应用.pdfVIP

FQD17N08L/FQU17N08LN沟道

QFETMOSFET80V,12.9A,100m

描述特性

这款N沟道增强型功率MOSFET采用Fairchild•12.9A,80V,RDS(导通)=100m(最大)@VGS

Semiconductor®的专有平面条纹和DMOS技术制造。这10V,ID=6.45A

种先进的MOSFET技术特别针对降低导通电阻进行了优化，

•低栅极电荷（典型值8.8nC）

并了卓越的开关性能和高雪崩能量强度。这些器件适用于

开关电源、音频放大器、直流电机控制和可变开关电源应用。•低Crss（典型值29pF）

•100%雪崩测试

FQD17N08L/FQU17N08L

N-ChannelQFETMOSFET

80V,12.9A,100m

DescriptionFeatures

ThisN-ChannelenhancementmodepowerMOSFETis•12.9A,80V,RDS(on)100m(Max)@VGS10V,

®

producedusingFairchildSemiconductor’sproprietary

ID=6.45A

narstripeandDMOStechnology.Thisadvanced

MOSFETtechnologyhasbeenespeciallytailoredtoreduce•LoweCharge(Typ.8.8nC)

on-stateresistance,andtoprovidesuperiorswitching

performanceandhighavalancheenergystrength.These•LowCrss(Typ.29pF)

devicesaresuitableforswitchedmodepowers,•100%AvalancheTested

audioamplifier,DCmotorcontrol,andvariabl