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- 2026-03-04 发布于浙江
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IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164179
High-PerformancePi-GatePoly-SiJunctionless
andInversionModeFET
Dong-RuHsieh,Jer-YiLin,Po-YiKuo,andTien-ShengChao
Abstract—Inthispaper,thePi-gate(PG)poly-Sijunction-
less(JL)andinversionmode(IM)FETswithahighaspect
ratio(A.R.=channelthickness/channelwidth∼
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