微电子技术论文7582399.pdfVIP

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  • 2026-03-04 发布于浙江
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IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164179

High-PerformancePi-GatePoly-SiJunctionless

andInversionModeFET

Dong-RuHsieh,Jer-YiLin,Po-YiKuo,andTien-ShengChao

Abstract—Inthispaper,thePi-gate(PG)poly-Sijunction-

less(JL)andinversionmode(IM)FETswithahighaspect

ratio(A.R.=channelthickness/channelwidth∼

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