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- 约4.02千字
- 约 7页
- 2026-03-23 发布于北京
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六方氮化硼薄膜制备及其深紫外光电探测器研究
关键词:六方氮化硼;薄膜制备;深紫外光电探测器;CVD;PVD;MBE
Abstract:Thispaperaimstoexplorethepreparationmethodsofhexagonalboronnitride(h-BN)thinfilmsandtheirapplicationsasdeepultravioletphotodetectors.Thebasicpropertiesandstructuralcharacteristicsofh-BNarefirstintroduced,followedbyadetaileddiscussionofthethinfilmpreparationtechniques,includingchemicalvapordeposition(CVD),physicalvapordeposition(PVD),andmolecularbeamepitaxy(MBE).Thekeyparametersduringthepreparationprocess,suchastemperature,pressure,gasflowrate,andsubstrate
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