LED I-V特性分析:P-N结机制与理想及非理想特性探讨.pptxVIP

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LED I-V特性分析:P-N结机制与理想及非理想特性探讨.pptx

LEDI-VCharacteristicContents1.P-Njunctionmechanism2.IdealI–Vcharacteristic3.DeviationsfromtheidealI–Vcharacteristic

ZeroBiasP-NJunctionMechanism

ShockleyequationDiffusionvoltageIncasethatVkT/e,IdealI–Vcharacteristica.Alldopantsarefullyionizedb.Nocompensationofthedopantsc.Biasvoltagedropsonlyacrossdepletionregiond.IgnoreexcesscurrentcausedbycarriergenerationandbinationBasicalassumption

Highlydopedsemiconductors(EC–EF)Eg(EF–EV)EgAccordingtoBoltzmannstatisticsThus,Thus,

CurrentVSTemperatureis

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