GBT 47404-2026 碳化硅单晶标准立项发展报告.docxVIP

碳化硅单晶标准立项发展报告

StandardizationDevelopmentReport:SiliconCarbideSingleCrystal

摘要

关键词：碳化硅单晶；国家标准；半导体材料；标准立项；第三代半导体

Abstract

Siliconcarbide(SiC)singlecrystal,asthecorerepresentativeofthethird-generationwidebandgapsemiconductormaterials,isprofoundlyreshapingtheglobaltechnologicallandscapeinpowerelectronics,microwaveradiofrequency,andoptoelectronicfields,owingtoitsexcellentphysicochemicalproperties—highbreakdownelectricfieldstrength,highelectronsaturationdriftvelocity,highthermalconductivity,andstrongradiationresistance.Withthecontinuousa