太阳能电池资料.pdfVIP

下载本文档

19
0
约8.39万字
约 11页
2017-09-25 发布于北京
举报
版权申诉

太阳能电池资料.pdf

1、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。。
2、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
4、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
5、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
6、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
7、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of aSi:H solar cells J. Deng and C. R. Wronski Citation: J. Appl. Phys. 98, 024509 (2005); doi: 10.1063/1.1990267 View online: /10.1063/1.1990267 View Table of Contents: /resource/1/JAPIAU/v98/i2 Published by the American Institute of Physics. Additional information on J. Appl. Phys. Journal Homepage: / Journal Information: /about/about_the_journal Top downloads: /features/most_downloaded Information for Authors: /authors Downloaded 19 Jan 2012 to 11. Redistribution subject to AIP license or copyright; see /about/rights_and_permissions JOURNAL OF APPLIED PHYSICS 98, 024509 2005 Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a-Si:H solar cells J. Denga and C. R. Wronski Center for Thin Film Devices, The Pennsylvania State University, University Park, Pennsylvania 16802 Received 26 January 2005; accepted 6 June 2005; published online 25 July 2005 A careful study has been carried out on dark forward bias current-voltage characteristics in high-quality well-controlled a-Si:H solar cell structures. Contributions of potential barriers in the intrinsic layers adjacent to the p and n contacts on carrier injection have been clearly identiﬁed and carrier recombination in the p / i regions systematically controlled and clearly separated from that in the bulk of the intrinsic layers. It is found that the recombination in the p / i regions results in voltage-independent diode quality factor, n, with values very close to 1 whereas recombination in the bulk results in bias-dependent differential diode quality factors, nV. These nV characteristics