专业英语2-第3讲-Chapter 3.4.docVIP

Chapter 3 Processing Technology 3.1 Crystal growth and epitaxy 晶体生长和外延As discussed previously in Chapter 1, the two most important semiconductors for discrete分离的 devices and integrated circuits are silicon and gallium镓 arsenate. 正如之前在第一章所讨论的，对于分立器件和集成电路而言, 两种最重要的半导体是硅和砷化镓。In this chapter we describe the common techniques for growing single crystals of these two semiconductors. 在本章, 我们描述生长这两种半导体单晶的常用技术。 The basic process flow is from starting materials to polished抛光 wafers. 基本流程是从原料到抛光片。 The starting materials (e.g., silicon dioxide for a silicon wafer) are chemically processed to form a high-purity polycrystalline多晶 semiconductor from which single crystals are grown. 原材料(即，用于生长硅片的二氧化硅) 通过化学处理 形成高纯度的多晶半导体以生长单晶。 di-ox-ide 二氧化di-chlor-ide二化i-sulf-ide 二化polycrystalline 多晶poly-聚合、多, mulit-多 single- 单 The single-crystal ingots锭 are shaped to define the diameter of material and sawed into wafers. 的单晶锭决定了材料的直径并且被切成晶元。These wafers are etched蚀刻 and polished to provide smooth, specular surfaces on which devices will be made. 这些晶圆蚀刻和抛光镜面表面，在。A technology closely related to crystal growth involves the growth of single-crystal semiconductor layers upon a single-crystal semiconductor substrate基片，衬底. 晶体生长密切相关的一个技术包括在单晶半导体基板上生长单晶半导体层(的技术)。 This is called epitaxy, from the Greek words epi (meaning “on”) and taxis (meaning “arrangement”). 这被称为外延，来源于希腊文字中的 epi（意为“on”）及 taxis（意为“安排”）。 The epitaxial process offers an important means of controlling the doping profiles剖面，详细资料 so that device and circuit performances can be optimized优化. 外延工艺提供了控制掺杂分布，使设备和电路性能可以得到优化的重要手段。 For example, a semiconductor layer with a relatively low doping concentration浓度 can be grown epitaxially upon a substrate which contains the same type of dopant掺杂剂in a much higher concentration(e.g.,n-type silicon on an n+ -silicon substrate). 例如，一个相对较低的掺杂浓度的半导体外延层可以外延生长在一个掺杂类型相同但浓度更高的的基片上（例如，n型硅生长在n+ - Si衬底硅）。 In this way the series resistance 串联电阻associated with the substrate can be substantially reduced. 通过