0.13μm显影工艺中喷嘴选择和程式改进的研究.docVIP

  0.13μm 显影工艺中喷嘴选择和程式改进的 研究 吴敏1,2* 5 10 15 20 25 30 35 40 45 （1. 上海交通大学微电子学院，上海 200240； 2. 中芯国际集成电路制造（上海）有限公司微影工程处，上海 201203） 摘要：随着集成电路工艺关键尺寸的不断递减，制造工艺中关键的光刻技术面临巨大的挑战。 这不仅是技术节点跨越的难题，更是需要新工艺平台生产设备的更新和优化，以满足半导体 ULSI 的性能和可靠性的提高。由此带来新的课题是，如何尽可能在现有工艺平台的生产设 备条件下，通过对关键部件的改动和工艺条件的最优化设置，来达到更高的工艺要求。对于 目前国内以 8 英寸 wafer(晶圆)为主流的生产线，主要面向 0.13μm 的技术节点来看，更加具 有现实意义。本文通过对于光刻工艺中的显影工序实验数据分析。研究了显影设备的部件 nozzle(喷嘴)的变更和对显影步骤工艺条件的优化。得出了最适应于 0.13μm 工艺平台的 LD 显影喷嘴加上两次显影涂布的模式。解决了困扰业界的显影效果和对于表面图形的冲击效应 的矛盾问题，从而达到 0.35μm 光刻工艺平台到 0.13μm 工艺平台的平滑升级。 关键词：集成电路；显影；0.13μm；喷嘴；程式 中图分类号：TN4 Nozzle selection and recipe improvement in 0.13μm development process WU Min1,2 (1. Microelectronics School,Shanghai Jiaotong University, ShangHai 200240; 2. Semiconductor Manufacturing International Corporation, ShangHai 201203) Abstract: With the critical dimension (CD) continuously decreasing in integrated circuit technology, the key technology of photolithography is facing a great challenge. To meet the semiconductor ULSI performance and reliability improvement, equipment needs update and optimization to match new technology platform. It brings a new task is that how to reach the process target without the process equipment update. The main solution is that modification of the hardware and optimization of the process condition. Especially the mainstream manufactory line inland are 8 inch techniques that are facing the 0.13μm technique level, the issue has more realistic meaning.This thesis through the study of experiment data of the development, try to cover the issue of the new process stage requirement by nozzle tip improvement and recipe optimize. In the end, we get the conclusion that the combination of LD nozzle and double scan recipe is the best solution to overcome the question. We also get many process factors that can keep process stable and controllable, for the need of 0.13μm process requirement and use for the product manufacture. Keywords: Integrated circuit; Development; 0.13μm; Nozzle; Recipe 0 引言