电子束蒸发制备用于薄膜太阳能电池的硫化镉多晶薄膜.docVIP

  电子束蒸发制备用于薄膜太阳能电池的硫 化镉多晶薄膜 耿雷1，徐岭1，苏为宁2，于瑶2，肖金荣1，仝亮1，徐骏1，马忠元1** 5 10 15 20 25 30 35 40 （1. 南京大学电子科学与工程学院，江苏省光电信息功能材料重点实验室，南京微结构国 家实验室，南京 210093； 2. 南京大学物理学院，南京微结构国家实验室，南京 210093） 摘要：利用电子束蒸发方法，在 P 型硅及玻璃衬底上制备了硫化镉（CdS）多晶薄膜。对不 同衬底温度制备的样品，通过 XRD ,AFM,光学透过率谱和吸收谱等测试手段研究了 CdS 多 晶薄膜结构和光电性能。结果表明，CdS 薄膜表面均匀、致密，均表现出沿002晶向的择 优生长，随着衬底温度的升高，晶粒尺寸增大，择优取向增强。 CdS 薄膜的光学带隙在 2.42-2.48 eV 之间，随着衬底温度的升高而降低。CdS 多晶薄膜与 P 型硅衬底形成的异质结 表现出良好的整流特性和光伏效应，适合作为薄膜太阳能电池的窗口层。 关键词：CdS；多晶薄膜；电子束蒸发；薄膜太阳能电池 中图分类号：O484 Electron beam evaporated cadmium sulphide thin films for solar cell applications Geng Lei1, Xu Ling1, Su Weining2, Yu Yao2, Xiao Jinrong1, Tong Liang1, Xu Jun1, Ma Zhongyuan1 (1. National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; 2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093) Abstract: Cadmium sulphide (CdS) thin films were deposited by electron beam evaporation at different substrate temperatures. The structural characteristics were studied by the X-ray diffraction (XRD) pattern. The CdS films are polycrystalline, exhibiting a preferred orientation along the (002) plane. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness of the films increases as the substrate temperature increases. The optical band gap values of CdS films decrease slightly with the increasing substrate temperature, in the range of 2.42-2.48 eV. The electrical characteristics of CdS/p-Si heterojunctions were investigated in dark condition and under illumination. Excellent rectifying and photovoltaic properties were observed. Key words: Cadmium sulphide; electron beam evaporation; substrate temperature; solar cell 0 引言 对 CdTe、CuInSe 等太阳能电池的研究，使得 CdS 薄膜受到广泛的关注。CdS 作为一种直接禁带的 n 型半导体，禁带宽度较宽，约为 2.42 eV，是良好的薄膜 太阳能电池窗口层材料，通常淀积在 p 型半导体材料如 CdTe、CuInSe2 等以组成