液封浮区法生长GaAs晶体中的热应英.pdf

第25 卷 　第4 期 材 　料 　科 　学 　与 　工 　程 　学 　报 总第108期 Vol 2 5 　No 4 Journal of Materials Science Engineering Aug . 2007 Article ID 2007) Thermal Stress in GaAs Crystal Grown by Liquid Encapsulant Floatzone Method 1 2 ,3 2 LIU Chunmei ,LI Mingwei , CHEN Shuxian ( 1. Institute of Vehicle and Motive Power Engineering of Henan University of Science and Technology , Luoyang 471003 , China ; 2. Institute of Power Engineering , Chongqing University , Chongqing 400044 , China ; 3. Research Center of Biological Function Information and Instruments of Chongqing University by SecondTerm National 985 Project , Chongqing 400044 , China) 【Abstract 】　The thermal stress calculation for a 3 inch diameter gallium arsenide crystal grown by liquid encapsulation full floating ( ) zone LEFZ method under microgravity has been conducted by using the finite element numerical method. The crystal is assumed to be in a pseudosteady axisymmetric state and to behave as isotropic linearly elastic body. The effect of the thickness of the encapsulant and the rotation rate of crystal and feed rod on the thermal stress is analyzed. 【Key words】　thermal stress ; LEFZ method ; GaAs crystal ; microgravity CLC number : O78 　　　　Document Code : A 液封浮区法生长 GaAs 晶体中的热应力