显微组织对冶金法制备多晶硅电阻率的影响.pdfVIP

32 1 机 械 工 程 材 料 Vol. 32 No. 1 2008 1 M aterials for M e hani al Engineering Jan. 2008 , , ( 大连理工大学材料科学与工程学院, 三束材料改性国家重点实验室, 辽宁大连116024) : 利用四探针电阻 试仪光学显微镜扫描电镜电感耦合等离子发射光谱仪能谱分析 等设备, 从晶粒尺寸组织形态以及晶界析出物等对冶金法制备的多晶硅电阻率的影响结果表 明: 组织为等轴晶时, 电阻率的大小与晶粒大小成正比; 在组织为柱状晶时, 平行于柱状晶方向的电 阻率明显高于垂直方向的电阻率; 在纯度较低的多晶硅中, 金属杂质易在晶界处偏析, 形成金属硅 化物相, 降低了多晶硅材料的电阻率 : 多晶硅; 冶金法; 电阻率; 晶界; 金属硅化物 : T B303 : A : 1000-3738( 2008) 01-00 17-04 Effect of Metallurgical Structure on Electrical Resistivity of Metallurgic Multicrystalline Silicon ZHANG Wei-na, TAN Yi, XU u-min ( Dalian U niversity of Te hnology, Dalian 116024, China) Abstract: U sing a four point resist ivit y t est system, met allographi mi ros opy, s anning ele tron mi ros opy ( SEM) , indu tively- oupled plasma spe trometer ( ICP) , energy dispersive X-ray spe trometel ( EDS) et . , the influen e of grain size, mi rostru ture, hemi al omposition, pre ipitation in grain boundaries et . on ele tri al properties of mult i rystalline sili on prepared by metallurgi method w as investigated. T he ele tri al resistivity is dire tly propot ional to the grain size w hen the mi rostru ture w as equiax ied grains. When it olumnar grains, the ele tri al resistivity in the dire t ion parallel to t he olumnar ry stal is higher than at verti al to the grains. In the low-purity mult i ry st alline sili on, the metal impurity is easy t o segregate in grain boundaries, form ing phase of metal sili ides and making the ele tri al resistivity of the multi rystalline sili on lower . Key words: multi rystalline sili on; metallurgi method; ele t ri al resistivity; grain boundary; metal sili ide , , 0