TiO2掺Cu薄膜对LaAlO3衬底拉曼谱增强的分析.pdfVIP

中国科技论文在线 TiO 掺Cu 薄膜对LaAlO 衬底拉曼谱增 2 3 强的分析 王运佳，李树玮 ( 中山大学物理科学与工程技术学院，光电材料与技术国家重点实验室，广州510275) 摘要：在LaAlO3(111)衬底上，利用分子束外延(MBE)方法，在生长温度为480 ℃下，制备 了高质量纯TiO 及TiO 掺Cu 薄膜，并利用拉曼光谱、光电子能谱(XPS)等手段对样品进行 2 2 表征。XPS 分析结果显示Cu 原子为+1 价，Ti 原子为+4 价。拉曼光谱发现，在衬底LaAlO3 ﹣ 的 122.6 cm 1 拉曼位移峰位处，TiO2 掺 Cu 薄膜对衬底有拉曼增强效应出现，而在纯TiO2 薄膜样品中，却未出现拉曼增强现象。当将TiO 掺Cu 的薄膜样品在室温环境下放置一段时 2 间后，原有的拉曼增强现象消失。综合实验结果初步分析，其原因与掺入Cu 原子的化合价 为+1 价以及其在薄膜中的存在形式为团簇或是取代Ti 原子有关，具体原因还需进一步验证。 关键词：Cu 掺杂TiO2 ；拉曼增强；分子束外延生长 中图分类号：O469 文献标识码：A Analysis of the enhanced Raman spectroscopy of LaAlO3 substrate in Cu-doped TiO2 film Wang Yunjia, Li Shuwei (State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China) Abstract: High crystalline pure TiO and Cu-doped TiO thin films have been fabricated on LaAlO 2 2 3 (111) substrates by molecular beam epitaxy (MBE) at 480°C. The samples were characterized by means of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). XPS analysis indicated that the valence of Cu is +1 and that of Ti is +4. At the 122.6 cm ﹣1 Raman characteristic peak of LaAlO , the fresh Cu-doped TiO thin film displays an enhanced Raman spectroscopy, but it does not 3 2 occur in the pure TiO2 . The Raman enhancement disappears when the Cu-doped TiO2 thin film is exposed at room temperatur