具有ITO和IZO叠层结构的低粗糙度和易刻蚀的透明导电氧化物.pdfVIP

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具有ITO和IZO叠层结构的低粗糙度和易刻蚀的透明导电氧化物.pdf

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中国科技论文在线 Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO# Xu Hua, Lan Linfeng, Xu Miao, Luo Dongxiang, Li Min, Xiao Peng, Yao Rihui, ** 5 Peng Junbiao (State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, GuangZhou 510640) Abstract: Indium tin Oxide (ITO) thin film is hard to be etched in wet etchants because of the crystalline state. To obtain easily-etched transparent conductor oxide (TCO), a layer of ultra-thin 10 indium-zinc oxide (IZO) was inserted between ITO films. It was found that the as-deposition TCO film with IZO insertion layers was amorphous and easily-etched by oxalic. Furthermore, the surface roughness of this multilayer TCO film was only 0.52 nm, much lower than that of the ITO monolayer film with the same thickness. After annealing at 250 degree in air, a low sheet resistance of ~10 Ω/ϒ and a reasonably transmittance of ~85% in visible range film were obtained. 15 Keywords: transparent conducting oxide; ITO-IZO multilayer film; easily-etched 0 Introduction Indium tin oxide (ITO) films have been widely employed in flat-panel displays (FPDs), such as liquid crystal displays (LCDs) and organic light emitting diodes