ZnGeP2多晶合成工艺改进及其X射线衍射研究分析论文.docVIP

  ZnGeP2 多晶合成工艺改进及其 X 射线衍射 分析# 王志超，朱世富，赵北君，陈宝军，何知宇，张建强，杨登辉，曹新玲** 5 10 （四川大学材料科学系，成都 610064） 摘要：两温区气相输运合成 ZnGeP2 多晶，易发生化学计量比偏离，产生 Ge、Zn3P2 等杂相， 在合成坩埚（石英安瓿）内壁凝聚一层 ZnP2 和 P 的沉积物．通过对合成设备、安瓿尺寸和 工艺的改进，采用机械振荡炉体和竖直梯度降温相结合的新工艺，成功地合成出 ZnGeP2 多 晶材料．合成的 ZnGeP2 多晶，经 XRD 分析测试，并采用 Rietveld 法进行全谱拟合精修、 计算出各物相的相对含量．结果表明，改进工艺合成的 ZnGeP2 多晶是高纯单相材料，可用 于单晶生长. 采用改进工艺合成的 ZnGeP2 多晶为原料，生长出完整性好的 ZnGeP2 单晶体， 在 2.5~8.2μm 范围的透过率达 60%左右，光学质量较高． 关键词：磷锗锌；多晶合成；工艺改进；竖直梯度降温；X 射线衍射 中图分类号：O722；O734 15 Process improvement of polycrystalline synthesis and X-ray diffraction analysis on ZnGeP2 WANG Zhichao, ZHU Shifu, ZHAO Beijun, CHEN Baojun, HE Zhiyu, ZHANG Jianqiang, YANG Denghui, CAO Xinling 20 25 30 35 40 (Department of Materials Science,Sichuan University, ChengDu 610064) Abstract: The stoichiometry of ZnGeP2 polycrystals synthesized by two-temperature vapor transport method deviates easily. Impurity phases of Ge and Zn3P2 and condensed layer of ZnP2 and P precipitates occurred in the inner wall of the synthesis crucible (quartz ampoule). We used a new synthesis process that combined mechanically oscillated furnace and vertical gradient cooling technique, modified synthesis equipment, and chose appropriate size of the quartz ampoule. We successfully synthesized the ZnGeP2 polycrystalline materials. Phase analysis was carried out using X-ray diffraction (XRD) on synthesized ZnGeP2 polycrystals. Whole pattern fitting refinement by Rietveld method was adopted, and then the relative contents of each phase were calculated by quantitative analysis. The results showed that synthesized ZnGeP2 using improved process is high-purity and single-phase, and that it can be used to grow ZnGeP2 crystals. We have grown integral ZnGeP2 crystal using the synthesized ZnGeP2 polycrystals as raw material. Its infrared transimittance in the range of 2.5~8.2 μm is close to 60% and it indicated that the optical quality of the grown crystal is good. Keywords: ZnGeP2; polycrystalline synthesis; process improvement; vertic