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23 5 Vol. 23, No. 5 2008 9 Journal of Inorganic Materials Sep., 2008 : 1000-324X(2008)05-0928-05 3C-SiC/Si(111) X (℄ ℄ 230029) 1000 (SSMBE) Si 3C-SiC RHEED Si(111) SiC 3C-SiC, X (GID) X (XRD) SiC 3C-SiC Si Phi SiC/Si SiC GID XRD SiC X ℄℄ O484, TN304 A 3C-SiC/Si(111)by X-ray Grazing Incident Diffraction LIU Zhong-Liang, LIU Jin-Feng, REN Peng, LI Rui-Peng, XU Peng-Shou, PAN Guo-Qiang (National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China) Abstract: Monocrystalline 3C-SiC films were successfully grown on Si(111) substrate at substrate ◦ temperature of 1000 C by molecular beam epitaxy (MBE) using solid-state element C and Si sources. The RHEED results indicate that the film grown on Si(111) substrate is 3C-SiC film with all cubic axes parallel the substrates. The quality and the strain of the film were investigated by Synchrotron radiation X-ray grazing incident diffraction method (GID) combining X-ray diffraction (XRD). The result shows that the film is in the state of biaxial tensile strain. The biaxial tensile strain is attributed to the large lattice and thermal expansion coefficient mismatch between SiC and Si. According to the result of the rocking curves of the film at different grazing incident angles, quality of the film is better in the zone far from the interface between SiC and Si due to the decrease of the defects in the zone far from the interface. The results of rocking curves of GID and XRD show that the tilt mosaic is bigger than the twist mosaic in the SiC film, which indicates that the lattice array in pl