2009年计算机等级考试二级VF笔试全真试卷.pptVIP

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2009年计算机等级考试二级VF笔试全真试卷.ppt

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Chapter 1 Power electronic devices power semiconductor devices Uncontrolled devices:diode Half controlled devices:thyristor Typical fully-controlled devices: GTO, GTR, power MOSFET, IGBT Current-driven (current-controlled) devices: thyristor, GTO, GTR? Voltage-driven (voltage-controlled) devices (Field-controlled devices):power MOSFET, IGBT? Chapter 1 Highest frequency? Largest capability? Anode ,Cathode, Gate Keep thyristor conducting? Turn on? Turn off? The triggering signal Gate dissipation Chapter 1 Positive voltage The anode of thyristor Positive pulse Negative pulse Direct current Holding current IH ？ Latching up current IL ？ Peak forward surge current ITSM (Thyristor parameter)浪涌电流 Average rectified forward current IF(AV) （diode parameter）正向平均电流 Chapter 1 Gate drive circuit Control circuit Power stage Electrical isolation Optical isolation Magnetic isolation Chapter 1 Primary functions Snubber circuits？ RCD snubber circuits？ Series ,parallel Steady-state voltage sharing？ Steady-state current sharing? Element Resistance Capacitance Inductance Chapter 1 lost its function secondary breakdown Turn-on snubber Turn-off snubber Overvoltage Overcurrent the interface between between A and B even voltage sharing even current sharing Chapter 1 Gate anode cathode Drain source Emitter collector Terminals turned-on by a control signal turned-off by the power circuit on and off states of the device Chapter 1 The principal differences lie in the modifications in the structure achieve gate turn-off capability. Basic structure similar to power MOSFET except extra p region According to the treatment of energy Power dissipating snubber Lossless snubber Chapter 2 Single-phase half-wave controlled rectifier Single-phase bridge fully-controlled rectifier Three-phase half-wave controlled rectifier Three-phase bridge fully-controlled rectifier The range of phase-shift ？ Resistive load Inductive load Resistor