超薄HfO2高K栅介质中电场依赖时变击穿(TDDB)特性.pdfVIP

Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT * Hong Yang, Ning Sa, Jinfeng Kang Institute of Microelectronics, Peking University, Beijing 100871, P. R. China * Email: kangjf@ Abstract In this paper, ultra thin CVD HfO -gated nMOS capacitors (nMOSCs) with 2 EOT~0.9 nm were fabricated. The time-dependent dielectric breakdown (TDDB) characteristics of the 0.9 nm HfO2 gate stack were studied under constant voltage stress (CVS). Area scaling consistent with Weibull statistics as in SiO2 was observed in the gate stack, demonstrating that intrinsic effects dominate time-dependent dielectric breakdown (TDDB) characteristics of the ultra thin HfN/HfO2 gate stack. For the first time, different TDDB characteristics under gate injection with low and high CVS were demonstrated in the sub-1 nm EOT HfO2 gated devices. The results show that interfacial layer initiated breakdown dominates the TDDB under low CVS and HfO2 bulk initiated breakdown under high CVS. A new breakdown model is proposed to explain the new demonstrated TDDB characteristics. Keywords: High K Gate Dielectric, Reliability, Time-Dependent Dielectric Breakdown (TDD