sol-gelpreparednano-crystallineMgxZn1-xO溶胶凝胶法制备ZnO薄膜.pdf

J Sol-Gel Sci Technol (2009) 52:228–234 DOI 10.1007/s10971-009-2032-0 ORIGINAL PAPER Effect of post-annealing on the band gap of sol–gel prepared nano-crystalline Mgx Zn12x O (0.0 £ x £ 0.3) thin films S. R. Meher Æ Kuyyadi P. Biju Æ Mahaveer K. Jain Received: 29 January 2009 / Accepted: 18 June 2009 / Published online: 6 July 2009 Springer Science+Business Media, LLC 2009 Abstract Polycrystalline Mg Zn O (MZO) thin films detectors [3]. Again, ZnO/MgZnO based heterostructures x 1-x on glass substrates were prepared by sol–gel method. All have received a great deal of attention due to their potential the films retained the hexagonal wurtzite structure of ZnO. applications in optoelectronic devices in the blue-UV The band gap values determined from transmission spectra region of the spectrum [4–6]. The ionic radii of Mg2? were found to be smaller than the values obtained from ˚ 2? ˚ (0.78 A) and Zn (0.83 A) are nearly equal [7]. As a Vegard’s law for the as-deposited MZO films. For the films result, very little lattice distortion can be caused when Zn is with x = 0.1, 0.2 and 0.3, the band gap blue-shifted ini- replaced by Mg. But, the higher energy level of Mg 3s tially and then red-shifted with increase in the annealing orbital (as compared to Zn 4s orbital) pushes the conduc- temperature. The reason for this anomalous shift in the tion band edge of ZnO upwards. As a result of this, the band gap is attributed to the proper substitution of Mg band gap of the MZO alloy system is widened markedly. atoms into the Zn lattice sites after a certain critical MZO films ha