以常压热化学气相沉法由乙炔成长奈米碳管之研究.docVIP

以常壓熱化學氣相沉積法由乙炔成長奈米碳管之研究 韓世澤　葉競榮　姚品全 大葉大學電機工程系 彰化縣大村鄉山腳路112號 摘　要 本研究以溶膠—凝膠法（sol-gel method）製備之鎳觸媒，旋轉塗佈於矽基板上，經線上還原後，以常壓熱化學氣相沉積法（atmospheric thermal CVD）由乙炔成長奈米碳管（carbon nanotubes, CNT）。研究結果發現：1. 觸媒前處理時間、氣體流量、溫度、氣體種類、混合比等製程參數，可用以控制CNT之直徑。前處理溫度為800(C，添加氫氣最適作用時間約10~20分鐘；2. 沉積反應條件之掌控對CNT 產物的形態至為關鍵。成長溫度為800(C，此時成長速率最快，CNT 在基板分佈密度最高；成長CNT時，添加氫氣有助於CNT管徑的控制，避免過多的竹節與彎曲形態產物發生；碳源與氫氣（C2H2/H2）最適比例約為0.1，如欲以thermal CVD系統達成奈米碳管的準直成長（aligned growth），則必須更精確掌控金屬觸媒的分散狀態（顆粒大小、分佈均勻性等）及控制CNT的成長速度。所成長之奈米碳管，以拉曼光譜分析，顯示兩個峰值，分別是1305 cm(1與1560 cm(1，證明產物為多壁奈米碳管，含有多量的石墨態非晶形沉積物。 關鍵詞：溶膠－凝膠法，觸媒，化學氣相沉積法，奈米碳管Synthesis of Carbon Nanotubes over Sol-Gel Deposited Substrates from Acetylene by Thermal Chemical Vapor Deposition Shih-Tse Hang, Chin-Yung Yeh and Pin-Chuan Yao Department of Electrical Engineering, DaYeh University No. 112, Shanjiao Rd., Dacun, Changhua 51591, Taiwan ABSTRACT Nickel nanoparticles synthesized by a sol-gel process were spin-coated over silicon substrates as catalysts for the growth of a carbon nanotube (CNT) by atmospheric thermal chemical vapordeposition. The as-deposited Ni film exhibited relatively good activity for the growth of CNTs. On the basis of the results obtained, several characteristics of CNT growth were observed: I. Pretreatment stage: Parameters including the reduction temperature, composition and flow rate of ambient gases had a prominent effect on the diameter and morphology of the as-grown carbon nanotube. A pretreatment temperature of 800(C for 10~20 minutes seems adequate for CNT growth. II. CNT growth stage: The temperature range for CNT growth extends from 700(C to 900(C. For intensive growth and better quality control of the nanotube, it was beneficial to introduce a reduction ambient such as hydrogen flow. The optimal ratio of H2/C2H2 extends to within 0.1 under which CNT was grown at a considerable rate. Meanwhile, it took about 10~20 minutes for complete CNT growth under an ambient containing H2. For better control of the orientation of the as-grown CNTs