信号系统 山大.ppt

Chapter 6 p-n Junction-Based Detectors  第六章 结型探测器 §6.1 Solar cell 光电池 §6.2 Photodiode 光电二极管 §6.3 PIN diode §6.4 Avalanche photodiode 雪崩管 §6.5 Phototransistor 光电三极管 §6.6 Photo FET 光电场效应管 §6.7 Main parameters 主要参量 §6.8 Photo coupler 光电耦合器件 §6.1 Solar cell 光电池 From /energy/alternate/print/solar_phy_print_e.html 2DR series §6.2 Photodiode 光电二极管 §6.3 PIN diode §6.4 Avalanche photodiode 雪崩管 An electron accelerated in a strong E field creates an additional electron-hole pair by impact ionization. Both the new electron and the original one then create additional electron-hole pairs, resulting in avalanche multiplication. In an avalanche photodiode (APD), electrons photoexcited in a nearly intrinsic region are swept out by a small electric field there, and injected into a high-field region between highly doped n and p layers. Avalanche multiplication occurs primarily in the high-field region.  §6.5 Phototransistor 光电三极管 §6.6 Photo FET 光电场效应管field effect transistor §6.7 Main parameters 主要参量 Current-power relation (2) Spectral characteristics (3) Current-voltage characteristics (4) Temperature dependent properties (5) Time response (6) Noise InGaAs PIN photodiode §6.8 Photo coupler 光电耦合器件 From From: Wang Qingyou et al., Optoelectronic Technology, Publishing House of Electronics Industry From: Wang Qingyou et al., Optoelectronic Technology, Publishing House of Electronics Industry From /homework-help/Electrical+Engineering/Field-Effect-Transistor /en/support/technical-notes.php /en/support/technical-notes.php /en/support/technical-notes.php From: Wang Qingyou et al., Optoelectronic Technology, Publishing House of Electronics Industry From From /en/support/technical-notes.php /en/support/technical-notes.php From: Wang Qingyou et al., Optoelectronic Technology, Publishing House of Electronics Industry * From From From From From .au/future-students/pv-devices/how-they-work.asp From: Wang Qingyou et al., Optoelectronic Technology, Publishing House