毕业设计（论文）-量子阱结构的优化设计对提高GaN基LED内量子效率的研究.docVIP

题 目 量子阱结构的优化设计对提高 GaN基LED内量子效率的研究 电子科学与工程院 院（系）电子科学与技术 专业 学 号 学生姓名 陈凯 指导教师 张雄 起止日期 2009/11/8至2010/6/20 设计地点 金陵院 量子阱结构的优化设计对提高GaN基LED内量子效率的研究 摘要 本文从GaN基LED的电学特性与光学特性入手，从理论上分析了GaN基LED的发光效率和其有源区结构之间的关系。主要运用目前已有的理论模型，在理论上探讨了GaN基LED发光效率的影响因素及其与内量子效率的关系。具体则讨论了GaN基LED有源区内势垒、材料、温度及量子阱结构对GaN基LED内量子效率的影响 。 最后，在对部分引用实验数据进行公式计算和数据分析后发现：使用AlGaN材料作为势垒层后，GaN基LED的外延片反向漏电和并联电阻与GaN基LED势垒层在同一数量级，说明AlGaN层具有较高的晶体质量。在结特性没有改变的情况下，串联电阻增加了近一倍。同时，这说明使用AlGaN作为势垒层的LED，其内量子效率比InGaN或GaN结构的LED有了明显的提高。 在量子阱的宽度方面，通过理论比较发现改变量子阱的宽度并没有造成晶体质量的明显改变。在电学特性相差不大的情况下，由于极化电场作用，采用较宽的阱宽，其内量子效率比较窄的阱宽有显著提高。 关键词：GaN基LED，LED光电特性、发光效率、外量子效率、内量子效率、量子阱 A STUDY ON ENHANCEMENT OF INTERNAL QUANTUM EFFICIENCY OF GaN-BASED LED BY OPTIMIZATION OF QUANTUM WELL STRUCTURE Abstract In this study, by investigating the electrical and optical characteristics of GaN-based LED, and analyzing the relationship between the GaN-based LED’s luminous efficiency and its active layer configuration. We mainly have found the relationship between the effect factor of GaN-based LED’s luminous efficiency and the internal quantum efficiency. Specifically, we discussed the relation between the GaN-based LED’s internal quantum efficiency and the barrier, material, temperature, and rhe configuration of quantum well (QW) in the active area. Then, after calculated and analyzed experimental data, we found that: by using AlGaN material as barrier, reverse leakage current of the GaN-based LED’s epitaxial layer and the parallel resistance of the GaN-based LED’s barrier are in the same order of magnitude as in the case of GaN barrier. This means that it has preferable crystal quality. And, while the P-N junction characteristic remained the same, the series resistance was almost doubled. This means that by using AlGaN as the barrier, the internal quantum efficiency of LED has been obviously increased as compared with u