电工学武汉理工大学课件chapter10-2.pptVIP

1. Form of PN junction 半导体二极管和三极管 10.2 PN junction A pn junction consists of a single crystal of semiconductor materials that is doped to produce N-type on one side and P-type on the other side. The impurities can be added to the crystal as it is grown or added later, either by diffusion of impurity atoms into the crystal or by ion implantation. Before the two halves of the junction are joined together, the N-side contains a higher concentration of free electrons and a low concentration of holes. The reverse condition exists in the P-type materials. Immediately after the types of two materials are joined, a concentration gradient exists across the junction for both types of carriers. P-side N-side space-charge layer P-side N-side Majority carriers form depletion layer by diffusion. In the neighborhood of the junction, in a small section called depletion region or space-charge layer Two sides of doped semiconductors are N-type semiconductor and P-type semiconductor. Internal field can prevent majority carriers from diffusion. space-charge layer P-side N-side Two moving modes of carriers: Diffusion: carriers move from higher concentration to lower concentration. Drift: carriers move along direction of electric field force action in electric field. Depletion region: diffusion and drift of carriers reach dynamic balance and consist depletion region, depletion region is called as PN junction. Direction of internal electric field PN junction is N-side to P-side. 2. Single direction conductive characteristics of PN junction If no voltage adding PN junction, diffusion of carrier and drift is in dynamic balance, width of depletion region is stable. 1) Forward voltage P (Positive)-side of exterior source to P -side、N (Negative )-side of exterior source to P-side. Directions of external field and internal field are opposite， space-charge layer get narrow. Drift get weak，diffusion get stronger， majority carriers generate forward currents. P N Direction of internal f