光电技术3.pptVIP

Chapter 3 Fundamentals of Semiconductors 第三章 半导体的基础知识 §3.1 Energy band 能带结构 §3.2 Intrinsic semiconductors and doped semiconductors 本征半导体和掺杂半导体 §3.3 Carrier concentration under thermodynamic equilibrium 平衡状态下载流子浓度 §3.4 Absorption of light in semiconductors 光在半导体中的吸收 §3.5 Nonequilibrium carrier concentration 非平衡状态下载流子浓度 §3.6 Transport of carriers 载流子的输运 §3.1 Energy band 能带结构 §3.2 Intrinsic semiconductors and doped semiconductors 本征半导体和掺杂半导体 Intrinsic semiconductors Doped semiconductors §3.3 Carrier concentration under thermodynamic equilibrium 平衡状态下载流子浓度 Fermi-Dirac Distribution Fermi energy of n-type and p-type silicon, EF,n and EF,p, as a function of doping density at 100, 200, 300, 400 and 500 K. Shown are the conduction and valence band edges, Ec and Ev. The midgap energy is set to zero. §3.4 Absorption of light in semiconductors 光在半导体中的吸收 Intrinsic absorption 本征吸收 Extrinsic absorption 非本征吸收 Impurity absorption 杂质吸收 Carrier absorption 载流子吸收 Exciton absorption 激子吸收 Crystal lattice absorption 晶格吸收 §3.5 Nonequilibrium carrier concentration 非平衡状态下载流子浓度 1 Equilibrium, Nonequilibrium 2 Generation and recombination Generation can be caused by an applied electric field, a change in temperature or exposure to light. Recombination is part of a process to restore equilibrium to a semiconductor that has been perturbed, or disturbed out of equilibrium. 3 Nonequilibrium carrier concentration 4 Majority carriers, minority carriers 5 Lifetime of Nonequilibrium §3.6 Transport of carriers 载流子的输运 Drift: When an electric field is applied across a semiconductor, the carriers start moving, producing a current. The positively charged holes move with the electric field, whereas the negatively charged electrons move against the electric field. Diffusion: Diffusion is the process of particles distributing themselves from regions of high concentration to regions of low conc