大功率IGBT模块并联均流特性研究.pdfVIP

10 6/2011 电力电子器件与应用 大功率IGBT模块并联均流特性研究 1 1 2 1 祁善军 ，翁星方 ，宋文娟 ，黄 南 （1 . 株洲南车时代电气股份有限公司，湖南 株洲 4 12 0 0 1 ；2 . 三一集团，湖南 长沙 4 10 10 0 ） 摘　要：大功率IGBT 并联运行能够承受更高的负载电流，但是大功率IGBT 并联设计时需要考虑静、动态均 流问题。P Spice 仿真分析表明，影响静态均流的主要因素是IGBT 模块的饱和导通压降和集电极、发射极引线的 等值电阻；影响动态均流的主要因素涉及驱动电路、IGBT 器件参数和主电路布局。提出了IGBT 并联均流的措施， 分析了IGB T 并联电路设计的关键点，并通过仿真分析验证了所提出方法的可行性。 关键词：IGBT 并联；静态均流；动态均流；PSpice 仿真 中图分类号：TN386.6 文献标识码：A 文章编号：1671-8410(2011)06-0010-05 Research on Even Flow of High-power IGBT Module in Parallel 1 1 2 1 QI Shan-jun , WENGXing-fang , SONGWen-juan , HUANGNan (1. Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou, Hunan 4 1200 1, China; 2. SANY Group, Changsha, Hunan 4 10 100, China) Abstract: The higher load current can be withstood when the high-power IGBT running in parallel. But the even flow problems of static and dynamic state require consideration when designing high-power IGBT in parallel. By PSpice simulation, the main factors affecting the static even flow are found, which include saturation voltage drop, collector and emitter’s lead equivalent resistance of IGBT module. The main factors affecting the dynamic even flow involve drive circuit, IGBT device parameters and main circuit layout. The solution of IGBT even flow in parallel is proposed. The key points of IGBT parallel circuit design are analyzed. By simulation , the feasibility of the proposed method is verified. Key words: parallel IGBT; static even flow; dynamic even flow; PSpice simulation 然而，IGBT并联电路由于IGBT器件参数不一致、驱 0 引言 动电路设计不合理及电路布局不对称等，将会引起流