TEM英文教学课件7.ppt

Fig. 4.3.2.9 HRTEM images simulation process of BNT calculated along the [111] zone axis direction; (b) Defocus = -50 nm, Thickness = 10 nm Fig. 4.3.2.10 (a) HRTEM images of BNBT6 along the [111] zone axis direction; (b) Simulated HRTEM image, Defocus = -50 nm, Thickness = 10 nm; (c) Project image of ordered structure model along [111] direction. (a) (c) 4.4. 电子衍射几何 薄(单)晶体电子衍射几何： 即有： 由Bragg公式: 由图： 即： L: 试样至底片有效长度 R: 斑点至底片中心距离 1/? 1/d O O* O L R 2? 爱氏球 薄晶体 O R 倒易杆 由： O R 那么： 由底片测出R，若已知L?，可求d 。 换言之，只有那些与电子束入射方向为晶带轴所组成的晶带才能参与衍射。 晶带定理： 因为当θ很小时，电子束与衍射的晶面几乎是平行的，电子束入射方向约等于由衍射晶面组成的晶带的晶带轴。 由结晶学知识，已知由两个不共方向的倒易矢量即可确定一个倒易点阵，因此，衍射矢量之间有一定内在联系，满足一定的关系： 那么： O* 满足关系： (1) (2) 为两条不共方向、相邻的最短矢量。 若 和 由： (1) (2) 另有(3) O* (4)任意确定某衍射点1的(hkl)； #薄晶(单)体电子衍射花样标定步骤： (1)测量各衍射点与中心点之距离 R ; (2)求各衍射点的 ; (3)对照JCPDS卡试标出各点的{hkl}； R1 O* R3 R2 {hkl} (5)用组成最小平行四边形，试标另2、3点的(hkl)； (7)按指数沿一定方向整数增大，标出其余各衍射点的(hkl)； 1(hkl) R1 O* 2 3 ? (220) (110) 之夹角?，与Cos?的求值比较、验正标定结果的正确性； (6)测量 (8)用 求晶带轴 电子衍射花样标定： 铁镍基合金中铁素体区内 AlNi金属间化合物析出物的ED分析 (000) (100) (010) (110) (020) (-100) (-110) The End! * 4.3.2. Phase-Contrast Images 4.3.2.1. INTRODUCTION Contrast in TEM images can arise due to the differences in the phase of the electron waves scattered through a thin specimen. This contrast mechanism can be difficult to interpret because it is very sensitive to many factors: the appearance of the image varies with small changes in the thickness, orientation, or scattering factor of the specimen, and variations in the focus or astigmatism of the objective lens. However, its sensitivity is the reason phase contrast can be exploited to image the atomic structure of thin specimens. Of course, this also requires: a TEM with sufficient resolution to detect contrast variations at atomic dimensions, and the proper control of instrument parameters that affect the phases of the electrons passing through the specimen and the lenses. If you know what