Irradiation Goals.ppt

Irradiation Goals Confirm that the breakdown performance improves with dose-Done Check that breakdown does not appear after inversion on n-type sensors-Done Confirm Ibias, Vdep changes as expected for proton/neutron irradiation Test CCE, resolution, etc. performance after proton irradiation with pixel telescope Proton Irradiation Irradiated 2 sets (n-type,p-type) of phi sensors and R sensors Phi sensor: 1.47x1015 p/cm2 → 9x1014 niel/cm2 (7 years @ 8mm) R sensor: 1.4x1015 p/cm2 → 8.5x1014 niel/cm2 (6.6 years @ 8mm) Built 1 set into double-R and double-Phi modules for FNAL test beam and laser test Other set used for CV measurements N-type R Sensor CV P-type R Sensor CV Laser Test-Proton Irradiation Laser tested double-R and double-phi modules while cooled (~-7 C at sensor) Stability of laser focus, intensity difficult to control See similar fraction (Irr/Non-Irr) of charge in both p-type and n-type Somewhere between 50-70% 8.5x1014 niel/cm2 From previous proton irradiaton on minis expect 40% (1.8x1015 niel/cm2) 68% (6.6x1014 niel/cm2) With annealing to minima, expect 10-15% more charge collected Will try to anneal during FNAL test-beam Proton Irradiation Conclusions From RD48 damage constants, expect ~480 V depletion voltages after annealing for measured dose of proton for n-type and p-type silicon We measured somewhere between 530-560 V for the n-type and p-type From previous proton irradiations of n-in-p minis, we expect to collect ~60% of the max charge From laser, get 50-70% pre-annealing Will confirm with test beam Thus, I would expect modules to be fully efficient after this dose (6.6 years @ 8 mm) Irradiation Results-IV Neutron Irradiation Results-CV Irradiation Results Irradiation of ~136 kRads with 6 MeV photons Hard breakdown behaviour improved greatly due to radiation Charge in oxide Soft breakdown behaviour (semi-ohmic) improved only in 1 of 3 sensors (2 unchanged) Should improve with neutron/proton irradiation which causes more bulk damage Irra