基于绝缘体上硅晶片的微机电系统红外光源.pdfVIP

30 5 Vol.30, No.5 2010 5 ACTA OPTICA SINICA May, 2010 :2010) 基于绝缘体上硅晶片的微机电系统红外光源 * 钱 昆 李方强 程美英 伞海生 陈旭远 (, 361005) ( MEMS) ( SOI) , , SOI SOI , (DRIE) , 700 K , 1.3~ 14. 5 m 5. 58%, 50%40 z ;; ;; ; TN214 A doi: 10. 3788/ AO 1455 MEMS Infrared Emitter B ased on SOI W afer Qian Kun Li Fangqiang Cheng Meiying San Haisheng Chen Xuyuan ( PenTung Sah MEMS Research Center , Xiamen Univer sity , Xiamen , Fujian 361005, China) Abstract A mic oelect omechanical systems ( MEMS) inf a ed ( IR) emitte is p esented. The I R emitte s a e fab icated on silicononinsulato ( SOI) wafe , and the esistance heating film on the SOI wafe used bo ondoped polysilicon by ion implantation technology. The single c ystal silicon on SOI wafe is designed as a heavilydoped inf a ed abso ption laye fo ealizing the selfheating effect. The lightemitting laye is fab icated by using deep eactive ion etching( DRIE)p ocess on the backside of SOI wafe , and the bu ied SiO laye of the SOI wafe is usedas 2 etching stop laye to cont ol the thickness of lightemitting laye . The su face tempe atu e and emission spect um of IR emitte a e measu ed by the mal imaging system and spect o adiomete . The expe imental esults show that in the case of su face tempe atu e of about 700 K, the ene gy conve sion efficiency is about 5. 58% in the spect um ange of 1. 3~ 14. 5 m. The expe iments also show that the modulation f equency can each to 40 Hz at 50% modulation depth. Key words optical fab