磁控溅射法制备Ag掺杂p型ZnO薄膜的研究.pdfVIP

Technology Column doi: 103969/jissn1003 353x201003007 Ag p ZnO 王莉, 何俊刚, 陈环, 刘志宇, 傅刚 ( 广州大学 物理电子工程学院, 广州510006) : 采用磁控溅射法在石英玻璃基片上生长 ZnO 和ZnOAg 薄膜借助于SEMXRD霍 尔测试透射谱测试等方法, 析了O 气氛下退火温度对薄膜结构和电学性能的影响霍尔测 2 试结果表明, Ag 掺杂ZnO 薄膜经过600 的O 气氛中热处理转变为p 型电导薄膜的XRD 测试 2 表明晶粒大小随退火温度升高而增大, 所有薄膜样品只出现 (002) 衍射峰, 呈现c 轴取向生长 薄膜对可见光的透过率大于83%, 其吸收限为378 nm : 氧化锌薄膜; 银掺杂; p 型半导体; 磁控溅射; 霍尔测试 : TN30592 : A : 1003 353X (2010) 03 0225 03 Preparation of Ag-Doped p- Type ZnO Thin Films by Reactive Magnetron Sputtering Wang Li, He Jungang, Chen Huan, Liu Zhiyu, Fu Gang ( College of Physics Electronic Engineering, Guangzhou University , Guangzhou 510006, China) Abstract ZnO and Ag doped ZnO thin films were prepared on quartzlite glass substrates by reactive magnetron sputtering. The effects of post growth annealing temperatures on the microstructure and electrical properties of the ZnOAg thin films were studied, using SEM, XRD, Hall measurement, transmission spectrum test. The Hall measurement shows that ZnOAg thin films transform to p type conduction after heat treatment at 600 in O2 atmosphere. The XRD shows that the grain size grows with rising annealing temperature. Only diffraction peaks corresponding to the ZnO (002) planes were observed in all samples, indicating the c axis as the preferable crystal orientation. The transmittance of the films was above 83% for visible light, and the absorption edge was about 378 nm. Key words ZnO thin films; Ag doped; p type semiconductor; magnetron sputtering; Hall measurement EEACC 7360F; 6855; 0670E IA H p 0 引言