PECVD技术制备单层光学薄膜抗激光损伤特性研究.pdfVIP

Vol No Journal of Applied Optics M ar P E C V D PECVD BK SiO SiNx LIDT PECVD PECVD o o SiO LIDT nm LIDT J cm nm LIDT J cm SiNx LIDT LIDT J cm o o LIDT J cm PECVD T N O A doi JA O Laserinduced damage resist properties of monolayer optical thin films prepared by PECVD technology Li Peng Hang Lingxia Xu Junqi Li Linjun Xian T echnological U niversity Xian China Shaanxi Province T hin Film T echnology and Optical T est Key Laboratory Xian China Abstract M onolay er SiO optical thin film s ref ractive is and SiNx optical thin film s re f ractive is w ith diff erent thicknesses w ere prepared by the plasma enhanced chemical va por depo sition PECVD technology on BK substrates their laserinduced damage thresholds LIDT w ere measured and the relationship betw een the monolay er optical thin film and it s la serinduced damage properties w as analyzed T he result s indicate that monolayer SiO thin film s prepared by PECVD technology have high LIDT w hen the optical thickness of films is o o betw een and LIDT has the maximum J cm w hen the optical thickness is nm LIDT has the minimum J cm w hen the optical thickne