660-GHz频段波导型SIS混频器嵌入阻抗的特性研究.pdf

第 卷第 期 红 外 与 毫 米 波 学报 ， 21 6 Voi . 21 No .6 年 月 ， 2002 12 J . Infrared Miiiim . Waves December 2002 INVESTIGATION OF EMBEDDING IMPEDANCE CHARACTERISTIC FOR A 660-GHZ WAVEGUIDE SIS MIXER ZHANG Wen SHAN Wen-lei SHI Sheng-cai （ ， ， ， ） Purpie Mountain Observatory Nanjing Jiangsu 210008 china （ ， ） Abstract With the heip of an eiectromagnetic fieid simuiator i . e . HFSS and a iumped-gap source method simiiar to the guasi- ， （ ） opticai antennas the embedding impedance of a 660-GHz waveguide SIS Superconductor-Insuiator-Superconductor mixer was ’ （ thoroughiy investigated from 600 to 720GHz . The effects of the junction s feed-point dispiacement inciuding horizontai and verticai offsets）， chip thickness and backshort iength were anaiyzed and caicuiated . The resuits indicate that the simuiated embedding ， impedance of the mixer is around 35!over the working freguency range which can match the SIS junction in a iarge bandwidth . The feed point iocation of the SIS chip has iittie effect on the embedding impedance，