Analysis of the excitonexciton interaction in semiconductor quantum wells.pdf

Analysis of the exciton-exciton interaction in semiconductor quantum wells Christoph Schindler∗ and Roland Zimmermann Humboldt-Universit¨at zu Berlin, Institut f¨ur Physik Newtonstraße 15, 12489 Berlin, Germany The exciton-exciton interaction is investigated for quasi- two-dimensional quantum structures. A bosonization scheme is applied including the full spin structure. For generating the effective interaction potentials, the Hartree-Fock and Heitler-London approaches are improved by a full two- exciton calculation which includes the van der Waals effect. With these potentials the biexciton 8 formation in bilayer systems is investigated. For coupled quantum wells the two-body scattering 0 matrix is calculated and employed to give a modified relation between exciton density and blueshift. 0 Such a relation is of central importance for gauging exciton densities in experiments which pave the 2 way toward Bose-Einstein condensation of excitons. l u J PACS numbers: 73.20.Mf, 71.35.Gg, 78.67.De 3 2 I. INTRODUCTION field in growth direction forces electrons and holes to re- ] side in adjacent quantum wells which are separated by a l barrier. Due to this spatial separation, the indirect exci- l Excitons (bound pairs of electron and hole) play a tons exhibit extremely long