Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitor.pdf

Ultrafast Dynamics of Interfacial Electric Fields in Semiconductor Heterostructures Monitored by Pump-Probe Second Harmonic Generation Yu. D. Glinka, T. V. Shahbazyan, I. E. Perakis and N. H. Tolk Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 X. Liu, Y. Sasaki and J. K. Furdyna Department of Physics, University of Notre Dame, Notre Dame, IN 46556 We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG). A pump beam was tuned to excite carriers in all layers of GaAs/GaSb and GaAs/GaSb/InAs heterostructures. Further carrier dynamics manifests itself via electric fields created by by charge separation at interfaces. The 2 evolution of interfacial fields is monitored by a probe beam through the eletric-field-induced SHG 0 signal. We distinguish between several stages of dynamics originating from redistribution of carriers 0 between the layers. We also find a strong enhancement of the induced electric field caused by 2 hybridization of the conduction and valence bands at the GaSb/InAs interface. r p A The ultrafast dynamics of optically excited carriers trapped at different sides of the interface and the result- 4 in semiconductors is an important issue in solid-state ing long-time dynamics (of the order of minutes) was physics [1,2]. The knowledge of processes governing the monitored by the electri