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DevelopmentofaLowDielectricConstant集成电路制造所需低介电常数聚合物的发展(正式版)
ADVANCEDDevelopmentofaLow-Dielectric-ConstantPolymerfortheFabricationofIntegratedCircuitInterconnectByStevenJ.Martin,*JamesP.Godschalx,MichaelE.Mills,Edward0.ShafferII,andPaulH.TownsendFor faster, smaller, and higher performance integrated circuits, a low dielectricconstantinsulatorisrequiredtoreplacesilicondioxide.HerethepropertiesofanewdielectricDSiLKresin,asolutionofalow-molecular-weightaromaticthermosetting阴阳阳arereviewedandexamplesofitsapplicationinthefabricationofinterconnectstructures,suchasthe oneshownintheFigure,aregiven.1.Introductiongratedcircuitinterconnect,summarizesthepropertiesofthen巳wdielectricinventedtomeetthatn巳巳d,andreviewspub-Aneworganicpolymer,SiLK (trademark ofTheDowChemicalCompany) semiconductor dielectric,was recentlydevelopedto enable thefabricationof faster, smaller,andhigher performance integratedcircuits.The newmaterialaddressesacriticalneedofthemicroelectronicsindustry:aninsulatorwithlowdielectricconstant toreplacesilicondiox-ide.Theelectricalproperties ofsilicondioxidenowlimitthepe巾rmanceofthemicroprocessorandotheradvancedsemi-conductordevicessoimportanttomodemelectronicandinformationtechnologies.Thisarticledescribestheneed forlow-diel民tric-constant materialsin the fabrication of inte-土[]S.J.MartinTheDowChemicalCompany 2030BuildingMidland,Ml48674(USA)E-mail:sjmartin@J.P.GodschalxTheDowChemicalCompany1701BuildingMidland,Ml48674(USA)M.E.MillsTheDowChemicalCompany1714BuildingMidland,Ml48674(USA)E.0.ShafferIITheDowChemicalCompany1702BuildingMidland,Ml48674(USA)P.HTownsendTheDowChemicalCompany1712BuildingMidland,Ml48674(USA)lisbed examples ofitssuccessfulusein th巳construction ofinterconnectstructures2. Need for Low-k DielectricsModernintegratedcircuitdevicescontainmillionsoftran-sistors electrically conn巳cted by millions of wires fabricated onthewafer.Thewires,orinterconnect,transform aseaoftransistorsintoafunctioningdevicewithlogicdefinedbythewirelayout.Someoftodaysadvancedlogicdeviceshaveasmany asseven layers ofint巳rconnect
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