固结磨料抛光垫抛光硅片的探索研究.pdfVIP

朱永伟 王 军 李 军 林 魁 南京航空航天大学, 南京, 210016 :采用失重法与铅笔硬度计分析了抛光 的组分对其溶胀率及干湿态硬度的影响,比较了固结 磨料方法与游离磨料方法抛光后硅片的表面粗糙度结果表明: 抛光 基体的溶胀率随基体中聚乙二 醇双丙烯酸酯( PEGDA) 或乙氧基化三羟基丙烷三丙酸酯(EO15- T MAPTA)含量的增加而提高; 基体 的干态硬度随PEGDA 含量的增加先有所增大, 而后减小, 随EO15 - TMAPTA 含量的增加而增大; 湿 15 态下铅笔硬度随PEGDA 或EO - T MAPTA 含量的增加而减小; 光引发剂量的增加,有利于增大基体 的干湿态硬度; 固结磨料抛光硅片的去除速率是游离磨料加工的2~ 3 倍, 而前者抛光硅片后的表面粗 糙度R a 为122nm, 大于后者的432nm :; ; ; :T N05 : 1004 132X( 2009)06 0723 05 Research on the Polishing of Silicon Wafer by Fixed Abrasive Pad Zhu ongwei Wang Jun Li Jun Lin Kui Nanjing University of Aeronautics and Astronautics, Nanjing, 210016 Abstract: Analytic scales and pencil hardness tester were employed to analyze the effect of the composition of pad on its swelling ration and hardness. T he average surface roughness of wafers pol ished by fixed abrasive pad( FAP) and conventional pad was compared. Results show that the swelling ratio of FAP rises with the increase of the content of polyethylene glycol diacrylate( PEGDA) or ethoxylated trimethylopropane triacrrylate(EO15 - T MAPTA) . The dry pencil hardness of FAP in creases with the increase of the content of EO15- T MAPTA, while it first increases, then decreases with the increase of the content of PEGDA. Its wet pencil hardness improves increasing the content of PEGDA or EO15- TMAPTA. T he photo initiator is helpful to improve its wet and dry pencil hard ness. Thematerial removal ratepolished with FAP is two or threetimes as much as that polished with conventional polishing, while the average surface roughness R a of silicon wafer polished by FAP rea ches 122nm, and is worse that the latter whose R a is 432nm. Key words: fixed abrasive pad; swelling ratio; pencil hardness;removal rate 0 引言