Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance英文资料.pdfVIP

IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 1, JANUARY 2013 573 Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance Jianjing Wang, Student Member, IEEE, Henry Shu-hung Chung, Senior Member, IEEE, and River Tin-ho Li, Member, IEEE Abstract—This paper presents a comprehensive study on the the failures of the switching devices and degrade the EMI and influences of parasitic elements on the MOSFET switching perfor- reliability performance of the converters. These problems come mance. A circuit-level analytical model that takes MOSFET para- as the penalties high-frequency power converters will be subject sitic capacitances and inductances, circuit stray inductances, and reverse current of the freewheeling diode into consideration is given to, and turn out to be the major hurdles ahead of the real appli- to evaluate the MOSFET switching characteristics. The equations cation of high-frequency technology. With ever faster switching derived for emulating MOSFET switching transients are assessed speed, parasitic elements of the MOSFET can exert more and graphically, which, compared to results obtained merely from sim- more profound impact on their switching performance. Neg- ulation or parametric study, can offer better insight into where ligence of these parasitic elements can no longer stand up to the changes in switching performance lie when the parasitic ele- ments are varied. The analysis has been successfully substantiated scrutiny. by the experimental results of a 400 V, 6 A test bench. A discussion Investigation