High temperature assessment of nitride-based devices英文资料.pdfVIP

J Mater Sci: Mater Electron (2008) 19:189–193 DOI 10.1007/s10854-007-9298-1 High temperature assessment of nitride-based devices ´ ˜ R. Cuerdo Æ J. Pedros Æ A. Navarro Æ A. F. Brana Æ ˜ J. L. Pau Æ E. Munoz Æ F. Calle Published online: 12 July 2007 Springer Science+Business Media, LLC 2007 Abstract The high temperature characterization of GaN- AlGaN/GaN high electron mobility transistors (HEMTs), based devices, including high electron mobility transistors InGaN/GaN p-i(MQW)-n photodiodes (PDs) and AlN (HEMTs), p-i-n photodiodes and surface acoustic wave surface acoustic wave (SAW) filters are three outstanding (SAW) filters is reported. Transmission line method (TLM) nitride-based devices of great interest for high temperature measurements reveal the reversible behaviour of both the (HT) applications. In this work, some preliminary results of ohmic contact resistance and the two-dimensional electron their performance under operation up to 350 C are pre- gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire sented and discussed. and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and 2 Experimental shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature HEMTs with different gate geometries were fabricated on coefficient of frequency of SAW filters on AlN epilayers AlGaN/GaN heterostructures grown on 6H-SiC(0001) and on different substrates has been measured. The influence of c-sapphire. Ni/Au bilayers were used for gate